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MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-24
* * * * *
IC Collector current .......................... 15A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
92 80 5.5 B2
(21) 35
B1
B2 E CE
B1
0.8
C
10.5 10.5 10.5 10.5 Tab#250, t=0.8 8.0 8.35
1.65
3.4 7.95
E
(4.5) 19.5 30
CE
C
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 15 15 150 1 150 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 155 Unit V V V V A A W A A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=15A, IB=0.3A -IC=15A (diode forward voltage) IC=15A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=15A, IB1=-IB2=0.3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 3.0 3.5 1.5 -- 2.5 15 3.0 0.8 1.2 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
20 Tj=25C IB=0.4A 3 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=5V
COLLECTOR CURRENT IC (A)
18 16 14 12 10 8 6 4 2 0 0
DC CURRENT GAIN hFE
IB=0.3A IB=0.2A IB=0.1A IB=0.04A
10 3 7 5 4 3 2 10 2 7 5 4 3
Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.8 2.2 2.6 3.0 3.4 3.8 Tj=25C VCE=2.8V
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat)
Tj=25C Tj=125C IB=0.3A 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 IC=15A 4 IC=10A 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
3
2
SWITCHING TIME
10 1 Tj=25C Tj=125C 7 5 VCC=600V 4 IB1=-IB2=0.3A 3 2 10 0 7 5 4 3 10 0
ts
tf
1 Tj=25C Tj=125C 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
ton
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
40
SWITCHING TIME
10 1 7 5 4 3 2 Tj=25C 10 0 Tj=125C 7 VCC=600V 5 IC=15A 4 IB1=0.3A 3 10 -1 2 3 4 5 7 10 0
COLLECTOR CURRENT IC (A)
ts, tf (s)
35 30 25 20 15 10 5 0 0
Tj=125C IB2=-0.5A
ts
tf
2 3 4 5 7 10 1
200 400 600 800 1000120014001600
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 100 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
s 100 s 200 s 500
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
1m s
10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 1.0
D C
VCE (V)
CASE TEMPERATURE
TC (C)
0.8
Zth (j-c) (C/ W)
0.6
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=0.3A 3 Tj=25C 2 Tj=125C 10 1 7 5 3 2 10 0 7 5 3 2 trr 10 2
Irr Qrr
10 1 trr (s) 10 0
Feb.1999
10 -1 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 710 1 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)

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